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US Patent Issued to Tokyo Electron on May 19 for "High aspect ratio carbon layer etch with improved throughput and process window" (American, Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,431, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo). "High aspect ratio carbon layer etch with improved throughput and proces... और पढ़ें


US Patent Issued to SCREEN Holdings on May 19 for "Substrate treating method and substrate treating apparatus" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,432, issued on May 19, was assigned to SCREEN Holdings Co. Ltd. (Kyoto, Japan). "Substrate treating method and substrate treating apparatus"... और पढ़ें


US Patent Issued to ams-OSRAM International on May 19 for "Method for producing a substrate having a structured surface, and substrate having a structured surface" (German Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,433, issued on May 19, was assigned to ams-OSRAM International GmbH (Regensburg, Germany). "Method for producing a substrate having a struct... और पढ़ें


US Patent Issued to Tokyo Electron on May 19 for "High aspect ratio contact etching with additive gas" (New York Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,434, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo). "High aspect ratio contact etching with additive gas" was invented by Du... और पढ़ें


US Patent Issued to Applied Materials on May 19 for "Ruthenium carbide for DRAM capacitor mold patterning" (California Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,435, issued on May 19, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Ruthenium carbide for DRAM capacitor mold patterning" ... और पढ़ें


US Patent Issued to Tokyo Electron on May 19 for "Plasma processing method and plasma processing system" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,436, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo). "Plasma processing method and plasma processing system" was invented by ... और पढ़ें


US Patent Issued to DISCO on May 19 for "Method of processing wafer using support substrate and joint member" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,437, issued on May 19, was assigned to DISCO Corp. (Tokyo). "Method of processing wafer using support substrate and joint member" was invent... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Offset data correction method and semiconductor device manufacturing method including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,438, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Offset data correction method and semiconducto... और पढ़ें


US Patent Issued to STMicroelectronics on May 19 for "Process for manufacturing a silicon carbide semiconductor device having improved characteristics" (Italian Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,439, issued on May 19, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy). "Process for manufacturing a silicon carbide semic... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Semiconductor processing tool and methods of operation" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,440, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor processing tool and met... और पढ़ें